? 2006 ixys all rights reserved ds99312e(10/05) polarhv tm hiperfet power mosfet (electrically isolated back surface) v dss = 500 v i d25 =19 a r ds(on) 190 m ? ? ? ? ? t rr 200 ns n-channel enhancement mode avalanche rated fast intrinsic diode features l international standard isolated packages l ul recognized packages l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect l fast intrinsic diode advantages l easy to mount l space savings l high power density symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = i t 190 m ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c19a i dm t c = 25 c, pulse width limited by t jm 100 a i ar t c = 25 c36a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 156 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force (ixfc) 11..65 / 2.5..15 n/lb (ixfr) 20..120 / 4.5..25 n/lb weight (ixfc) 3 g (ixfr) 5 g g = gate d = drain s = source ixfc 36n50p ixfr 36n50p g d s isoplus220 tm (ixfc) e153432 isolated back surface g d s isoplus247 tm (ixfr) e153432 isolated back surface
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 36n50p ixfr 36n50p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = t , note 1 23 35 s c iss 5500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 510 pf c rss 40 pf t d(on) 29 ns t r v gs = 10 v, v ds = 0.5 i d25 23 ns t d(off) r g = 4 ? (external) 82 ns t f 23 ns q g(on) 93 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 30 nc q gd 31 nc r thjc 0.75 c/w r thcs (isoplus 247) 0.15 c/w (isoplus 220) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 36 a i sm repetitive 100 a v sd i f = i s , v gs = 0 v, 1.5 v t rr i f = 25a, -di/dt = 100 a/ s 200 ns i rm v r = 100 v; v gs = 0 v 8 a q rm 0.6 c notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. test current i t = 18a. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 isoplus220 tm (ixfc) outline ref: ixys co 0177 r0 note: bottom heatsink (pin 4) is electrically isolated from pin 1,2, or 3. isoplus247 outline
? 2006 ixys all rights reserved ixfc 36n50p ixfr 36n50p fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12141618 202224 v d s - volts i d - amperes v gs = 10v 8v 5.5v 5v 6v 6.5v 7v fig. 3. output characte ris tics @ 125 o c 0 4 8 12 16 20 24 28 32 36 02 46 810121416 v d s - volts i d - amperes v gs = 10v 7v 6v 4.5v 5v 5.5v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 28 32 36 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v 5.5v fig . 4. r ds(on ) norm alize d to i d = 18a value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 36a i d = 18a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 18a value vs . drain curre nt 0.6 1 1.4 1.8 2.2 2.6 3 3.4 0 1020304050607080 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 6. drain current vs. case tem perature 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 36n50p ixfr 36n50p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100 q g - nanocoulombs v g s - volts v ds = 250v i d = 18a i g = 10m a fig. 7. input adm ittance 0 5 10 15 20 25 30 35 40 45 50 55 44.5 55.5 66.5 7 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 102030405060708090 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1m s dc t j = 150oc t c = 25oc r ds(on) lim it 10m s 25s
? 2006 ixys all rights reserved ixfc 36n50p ixfr 36n50p fig. 13. m axim um transient therm al resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w ixys ref: f_36n50p (7j) 12-06-05-c.xls
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